tsop17.. telefunken semiconductors rev. a4, 12-may-97 1 (6) photo modules for pcm remote control systems available types for different carrier frequencies type f 0 type f 0 TSOP1730 30 khz tsop1733 33 khz tsop1736 36 khz tsop1737 36.7 khz tsop1738 38 khz tsop1740 40 khz tsop1756 56 khz description the tsop17.. series are miniaturized receivers for in- frared remote control systems. pin diode and preamplifier are assembled on lead frame, the epoxy package is designed as ir filter. the demodulated output signal can directly be decoded by a microprocessor. tsop17.. is the standard ir remote control receiver se- ries, supporting all major transmission codes. 94 8691 gnd v s out features photo detector and preamplifier in one package internal filter for pcm frequency improved shielding against electrical field distur- bance ttl and cmos compatibility output active low low power consumption high immunity against ambient light continuous data transmission possible (1200 bit/s) suitable burst length 10 cycles/burst block diagram 94 8136 pin input agc control circuit band pass demodu- lator 100 k 1 2 3 v s out gnd
tsop17.. telefunken semiconductors rev. a4, 12-may-97 2 (6) absolute maximum ratings t amb = 25 c parameter test conditions symbol value unit supply voltage (pin 2) v s 0.3...6.0 v supply current (pin 2) i s 5 ma output voltage (pin 3) v o 0.3...6.0 v output current (pin 3) i o 5 ma junction temperature t j 100 c storage temperature range t stg 25...+85 c operating temperature range t amb 25...+85 c power consumption (t amb 85 c) p tot 50 mw soldering temperature t 10 s, 1 mm from case t sd 260 c basic characteristics t amb = 25 c parameter test conditions symbol min typ max unit supply current (pin 2) v s = 5 v, e v = 0 i sd 0.4 0.6 0.8 ma pp y ( ) v s = 5 v, e v = 40 klx, sunlight i sh 1.0 ma transmission distance e v = 0, test signal see fig.7, ir diode tsip5201, i f = 400 ma d 35 m output voltage low (pin 3) i osl = 0.5 ma,e e = 0.7 mw/m 2 , f = f o , t p /t = 0.4 v osl 250 mv irradiance (30 40 khz) pulse width tolerance: t pi 5/f o < t po < t pi + 6/f o , test signal (see fig.7) e e min 0.35 0.5 mw/m 2 irradiance (56 khz) pulse width tolerance: t pi 5/f o < t po < t pi + 6/f o , test signal (see fig.7) e e min 0.4 0.6 mw/m 2 irradiance e e max 30 w/m 2 directivity angle of half transmission distance j 1/2 45 deg application circuit 96 12108 tsal62.. tsop17.. 2 3 1 4.7 f *) c >10 k optional 330 *) +5 v **) *) only necessary to suppress power supply disturbances **) tolerated supply voltage range : 4.5 v tsop17.. telefunken semiconductors rev. a4, 12-may-97 3 (6) typical characteristics (t amb = 25 c unless otherwise specified) 0.7 0.8 0.9 1.0 1.1 e / e rel. responsitivity ( % ) e min f/f 0 relative frequency 1.3 94 8143 0.0 0.2 0.4 0.6 0.8 1.0 e 1.2 f = f 0 5% f ( 3 db ) = f 0 /10 figure 1. frequency dependence of responsivity 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0.1 1.0 10.0 100.0 1000.0 10000.0 e e irradiance ( mw/m 2 ) 96 12110 po t output pulse length (ms) input burst duration = 950 nm, optical test signal, fig.7 figure 2. sensitivity in dark ambient 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0.01 0.10 1.00 10.00 100.00 e dc irradiance (w/m 2 ) 96 12111 e min e threshold irradiance (mw/m ) 2 correlation with ambient light sources ( disturbance effect ) : 1 0w/m2 1.4 klx ( stand.illum.a, t = 2855 k ) 8.2 klx ( daylight, t = 5900 k ) ambient, = 950 nm figure 3. sensitivity in bright ambient 0.0 0.4 0.8 1.2 1.6 0.0 0.4 0.8 1.2 2.0 e field strength of disturbance ( kv / m ) 2.0 94 8147 1.6 e threshold irradiance ( mw/m ) e min 2 f(e)=f 0 figure 4. sensitivity vs. electric field disturbances 0.01 0.1 1 10 100 0.1 1 10 1000 94 9106 v srms ac voltage on dc supply voltage ( mv ) e threshold irradiance ( mw/m ) e min 2 f = f 0 10 khz 100 hz 1 khz figure 5. sensitivity vs. supply voltage disturbances 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 30 15 0 15 30 45 60 75 90 t amb ambient temperature ( c ) 96 12112 e min e threshold irradiance (mw/m ) 2 sensitivity in dark ambient figure 6. sensitivity vs. ambient temperature
tsop17.. telefunken semiconductors rev. a4, 12-may-97 4 (6) e e t t pi * t * t pi 10/fo is recommended for optimal functio n v o v oh v ol t 96 12109 optical test signal ( ir diode tsip 5201, i f = 0.4 a, 30 pulses, f = f 0 , t = 10 ms ) output signal t d 1 ) t po 2 ) 1 ) 7/f 0 < t d < 15/f 0 2 ) t po = t pi 6/f 0 figure 7. output function e e t v o v oh v ol t 600 s 600 s t = 60 ms t on t off 94 8134 optical test signal output signal , ( see fig.10 ) figure 8. output function 0 0.5 1.0 1.5 2.0 2.5 3.0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 t p /t duty cycle 96 12113 e min e threshold irradiance (mw/m ) 2 n=16 pulses per burst n=32 figure 9. sensitivity vs. duty cycle 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0.1 1.0 10.0 100.0 1000.0 10000.0 e e irradiance (mw/m 2 ) 96 12114 on off t ,t output pulse length (ms) t on = 950 nm, optical test signal, fig.8 t off figure 10. output pulse diagram 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 30 15 0 15 30 45 60 75 90 t amb ambient temperature ( c ) 96 12115 i supply current ( ma ) s v s = 5 v figure 11. supply current vs. ambient temperature 750 850 950 1050 0 0.2 0.4 0.6 0.8 1.2 s ( ) relative spectral sensitivity rel wavelength ( nm ) 1150 94 8408 1.0 figure 12. relative spectral sensitivity vs. wavelength
tsop17.. telefunken semiconductors rev. a4, 12-may-97 5 (6) 95 11339p2 0.4 0.2 0 0.2 0.4 0.6 0.6 0.9 0 30 10 20 40 50 60 70 80 1.0 0.8 0.7 d rel relative transmission distance figure 13. vertical directivity j y 95 11340p2 0.4 0.2 0 0.2 0.4 0.6 0.6 0.9 0 30 10 20 40 50 60 70 80 1.0 0.8 0.7 d rel relative transmission distance figure 14. horizontal directivity j x dimensions in mm 96 12116
tsop17.. telefunken semiconductors rev. a4, 12-may-97 6 (6) ozone depleting substances policy statement it is the policy of temic telefunken microelectronic gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( odss). the montreal protocol ( 1987) and its london amendments ( 1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. temic telefunken microelectronic gmbh semiconductor division has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2 . class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency ( epa ) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c ( transitional substances ) respectively. temic can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice . parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use temic products for any unintended or unauthorized application, the buyer shall indemnify temic against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. temic telefunken microelectronic gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 ( 0 ) 7131 67 2831, fax number: 49 ( 0 ) 7131 67 2423
|
